Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
Identifieur interne : 000142 ( Main/Repository ); précédent : 000141; suivant : 000143Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
Auteurs : RBID : Pascal:14-0095744Descripteurs français
- Pascal (Inist)
- Propriété électrique, Vinylidène fluorure polymère, Semiconducteur III-V, Composé III-V, Diode barrière Schottky, Polymère, Couche intermédiaire, Effet redresseur, Caractéristique courant tension, Caractéristique capacité tension, Mesure tension électrique, Hauteur barrière, Couche mince, Charge espace, Résultat expérimental, Etat interface, Densité état, Courant fuite, Capacité électrique, Or, Phosphure d'indium, InP, Substrat polymère, 7350, 8105E, 8530K, 8530H.
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English descriptors
- KwdEn :
- Barrier height, CV characteristic, Capacitance, Density of states, Electrical properties, Experimental result, Gold, III-V compound, III-V semiconductors, IV characteristic, Indium phosphide, Interface states, Interlayers, Leakage currents, Polymers, Rectification, Schottky barrier diodes, Space charge, Thin films, Vinylidene fluoride polymer, Voltage measurement.
Abstract
The effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The calculated barrier heights (BHs) are 0.57 eV (I-V), 0.72 eV (C-V) and 0.73 eV (I-V), 0.88 eV (C-V) for the Au/n-InP and Au/PVDF/n-InP Schottky diodes, respectively. Results showed that the BH of the Au/PVDF/n-InP Schottky diode is higher than that of the Au/n-InP Schottky diode, and that the PVDF film increases the effective BH by influencing the space charge region of the n-type InP. The values of the barrier height, ideality factors and series resistance estimated by I-V, Cheung's and Norde methods are compared. Experimental results showed that the interface state density of the Au/PVDF/n-InP Schottky diode is lower than that of the Au/n-InPSchottky diode. Further, the reverse leakage current conduction mechanism is investigated. Schottky emission mechanism is found to dominate the reverse leakage current in the Au/n-InP Schottky diode. However, for the Au/PVDF/n-InP Schottky diode, the Schottky conduction mechanism is found to be dominant in the higher bias region, whereas the Poole-Frenkel conduction is found to be dominant in the lower bias region. Apart from that, the discrepancy between BHs determined from I-V and C-V techniques is explained. Besides, the capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of the Au/PVDF/n-InP Schottky diode are discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer</title><author><name sortKey="Rajagopal Reddy, V" uniqKey="Rajagopal Reddy V">V. Rajagopal Reddy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Sri Venkateswara University</s1><s2>Tirupati 517 502</s2><s3>IND</s3><sZ>1 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Tirupati 517 502</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0095744</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0095744 INIST</idno><idno type="RBID">Pascal:14-0095744</idno><idno type="wicri:Area/Main/Corpus">000032</idno><idno type="wicri:Area/Main/Repository">000142</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>CV characteristic</term><term>Capacitance</term><term>Density of states</term><term>Electrical properties</term><term>Experimental result</term><term>Gold</term><term>III-V compound</term><term>III-V semiconductors</term><term>IV characteristic</term><term>Indium phosphide</term><term>Interface states</term><term>Interlayers</term><term>Leakage currents</term><term>Polymers</term><term>Rectification</term><term>Schottky barrier diodes</term><term>Space charge</term><term>Thin films</term><term>Vinylidene fluoride polymer</term><term>Voltage measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term><term>Vinylidène fluorure polymère</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Diode barrière Schottky</term><term>Polymère</term><term>Couche intermédiaire</term><term>Effet redresseur</term><term>Caractéristique courant tension</term><term>Caractéristique capacité tension</term><term>Mesure tension électrique</term><term>Hauteur barrière</term><term>Couche mince</term><term>Charge espace</term><term>Résultat expérimental</term><term>Etat interface</term><term>Densité état</term><term>Courant fuite</term><term>Capacité électrique</term><term>Or</term><term>Phosphure d'indium</term><term>InP</term><term>Substrat polymère</term><term>7350</term><term>8105E</term><term>8530K</term><term>8530H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term><term>Or</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The calculated barrier heights (BHs) are 0.57 eV (I-V), 0.72 eV (C-V) and 0.73 eV (I-V), 0.88 eV (C-V) for the Au/n-InP and Au/PVDF/n-InP Schottky diodes, respectively. Results showed that the BH of the Au/PVDF/n-InP Schottky diode is higher than that of the Au/n-InP Schottky diode, and that the PVDF film increases the effective BH by influencing the space charge region of the n-type InP. The values of the barrier height, ideality factors and series resistance estimated by I-V, Cheung's and Norde methods are compared. Experimental results showed that the interface state density of the Au/PVDF/n-InP Schottky diode is lower than that of the Au/n-InPSchottky diode. Further, the reverse leakage current conduction mechanism is investigated. Schottky emission mechanism is found to dominate the reverse leakage current in the Au/n-InP Schottky diode. However, for the Au/PVDF/n-InP Schottky diode, the Schottky conduction mechanism is found to be dominant in the higher bias region, whereas the Poole-Frenkel conduction is found to be dominant in the lower bias region. Apart from that, the discrepancy between BHs determined from I-V and C-V techniques is explained. Besides, the capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of the Au/PVDF/n-InP Schottky diode are discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>556</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer</s1></fA08><fA11 i1="01" i2="1"><s1>RAJAGOPAL REDDY (V.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Sri Venkateswara University</s1><s2>Tirupati 517 502</s2><s3>IND</s3><sZ>1 aut.</sZ></fA14><fA20><s1>300-306</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000506177460470</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>44 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0095744</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The calculated barrier heights (BHs) are 0.57 eV (I-V), 0.72 eV (C-V) and 0.73 eV (I-V), 0.88 eV (C-V) for the Au/n-InP and Au/PVDF/n-InP Schottky diodes, respectively. Results showed that the BH of the Au/PVDF/n-InP Schottky diode is higher than that of the Au/n-InP Schottky diode, and that the PVDF film increases the effective BH by influencing the space charge region of the n-type InP. The values of the barrier height, ideality factors and series resistance estimated by I-V, Cheung's and Norde methods are compared. Experimental results showed that the interface state density of the Au/PVDF/n-InP Schottky diode is lower than that of the Au/n-InPSchottky diode. Further, the reverse leakage current conduction mechanism is investigated. Schottky emission mechanism is found to dominate the reverse leakage current in the Au/n-InP Schottky diode. However, for the Au/PVDF/n-InP Schottky diode, the Schottky conduction mechanism is found to be dominant in the higher bias region, whereas the Poole-Frenkel conduction is found to be dominant in the lower bias region. Apart from that, the discrepancy between BHs determined from I-V and C-V techniques is explained. Besides, the capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of the Au/PVDF/n-InP Schottky diode are discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C50</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F03</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F01</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electrical properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Vinylidène fluorure polymère</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Vinylidene fluoride polymer</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Vinilideno fluoruro polímero</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diode barrière Schottky</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Schottky barrier diodes</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Polymère</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Polymers</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche intermédiaire</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Interlayers</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Effet redresseur</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Rectification</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>IV characteristic</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>CV characteristic</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Mesure tension électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Voltage measurement</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Hauteur barrière</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Barrier height</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Charge espace</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Space charge</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Résultat expérimental</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Experimental result</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Resultado experimental</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Etat interface</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Interface states</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Densité état</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Density of states</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Densidad estado</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Courant fuite</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Leakage currents</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Capacité électrique</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Capacitance</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Or</s0><s2>NC</s2><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Gold</s0><s2>NC</s2><s5>34</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>35</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>35</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat polymère</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>7350</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8105E</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8530K</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8530H</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>132</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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